Growth and Optical Analysis of Cobalt Tin Sulphide Thin Films using SILAR Technique
Authors: Damisa J, Emegha JO
DOI Info: http://doi.org/10.5281/zenodo.5805219
ABSTRACT
In this work, cobalt tin sulphide (CoSnS) thin films were deposited on soda-lime substrates via the successive ionic layer adsorption and reaction (SILAR) method. The CoSnS films were synthesized using cobalt sulphate, tin chloride dihydrate and thioacetamide solutions as sources of cobalt (Co) tin (Sn) and sulphur (S) respectively. XRD analysis revealed that the deposited films were polycrystalline in nature with strong adherent to the substrates. The absorbance was found to be high in the ultra-violet regions of the electromagnetic spectrum and, also decreased with deposition cycles. The band gap energy was found to increase from 1.22 to 1.52 eV with deposition cycles. The refractive index (n) as well as the optical electronegativity (Φ) were also determined and discussed. The finding indicates that the deposited material is suitable for optoelectronic devices where low optical absorbance is necessary.
Affiliations: Department of Physics, Faculty of Physical Sciences, University of Benin, PMB 1154, Benin City, Edo State, Nigeria.
Keywords: Thin Films, Cobalt Tin Sulphide, Deposition Cycle, Refractive Index, Band Gap
Published date: 2021/12/30
